STMicroelectronics STF33N60DM6, MDmesh™ M6 series, N-Channel MOSFET, 600V Vdss, 25A Id, 128mOhm Rds(on), 35nC Qg, TO-220FP, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M6 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Tc) |
| Power dissipation | 35W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 128mOhm @ 12.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1500 pF @ 100 V |
Input capacitance is 1500 pF at 100 V drain bias — the Miller plateau is short, so the turn-on delay is dominated by the driver source current, not the Ciss charging time.
Maximum power dissipation is 35 W at case temperature Tc, limited by the TO-220FP full-pack construction.
Yes, the STF33N60DM6 is ROHS3 compliant.