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STMicroelectronics STF33N60DM2 — Discrete Semiconductors

STF33N60DM2 N-Channel MOSFET, 650 V, 24 A, TO-220FP

MPNSTF33N60DM2
Active

STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, 650 V drain-source, 24 A continuous drain at 25°C, 130 mOhm Rds(on) at 10 V gate drive, 43 nC total gate charge, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.

$5.0100Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF33N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs130mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs43 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1870 pF @ 100 V

Product details

The 35 W power dissipation rating in the TO-220FP full-pack package means the designer must keep the average dissipation below that ceiling. Gate charge totals 43 nC at 10 V, which at a 100 kHz switching frequency demands about 4.3 mA average from the gate driver — well within the capability of a standard MOSFET driver IC, but the peak current during the Miller plateau still needs to be sized for the target switching speed.

Active production, TO-220FP sourcing

It is ROHS3 compliant.

Gate threshold and input capacitance — the drive and switching profile

Input capacitance is 1870 pF at 100 V drain-source.

Frequently asked questions

What is the Rds(on) of STF33N60DM2?

The maximum on-resistance is 130 mOhm at 12 A drain current with 10 V gate drive.

Is STF33N60DM2 RoHS compliant?

Yes, the part is listed as ROHS3 compliant.