STF33N60DM2

STMicroelectronics · MDmesh™ DM2 Series

STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, 650 V drain-source, 24 A continuous drain at 25°C, 130 mOhm Rds(on) at 10 V gate drive, 43 nC total gate charge, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.

STMicroelectronics STF33N60DM2
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Technical specifications

STF33N60DM2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs130mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs43 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1870 pF @ 100 V

Technical details

The 35 W power dissipation rating in the TO-220FP full-pack package means the designer must keep the average dissipation below that ceiling. Gate charge totals 43 nC at 10 V, which at a 100 kHz switching frequency demands about 4.3 mA average from the gate driver — well within the capability of a standard MOSFET driver IC, but the peak current during the Miller plateau still needs to be sized for the target switching speed.

Active production, TO-220FP sourcing

It is ROHS3 compliant.

Gate threshold and input capacitance — the drive and switching profile

Input capacitance is 1870 pF at 100 V drain-source.

STF33N60DM2
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