STMicroelectronics STF32NM50N, N-Channel MOSFET, MDmesh™ II series, 500 Vdss, 22 A Id, 130 mOhm Rds(on), TO-220 Full Pack, Through Hole.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 22A (Tc) |
| Power dissipation | 35W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 130mOhm @ 11A, 10V |
| Gate charge (Qg) (Max) @ vgs | 62.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1973 pF @ 50 V |
The supplier device package is TO-220FP, through-hole mount. Maximum power dissipation is 35 W at case temperature, and the maximum junction temperature is 150 °C.
The STF32NM50N is officially obsolete. For BOM lines that still specify this device, procurement must go through the surplus and broker channel. We source sealed factory reels and consistent date-code lots against an RFQ — no mixed-date repackaged stock.
Yes, the STF32NM50N is officially obsolete per the manufacturer's lifecycle status. There is no listed successor or direct replacement.
The maximum on-resistance is 130 mOhm at a drain current of 11 A and a gate-to-source voltage of 10 V.