STMicroelectronics MDmesh V N-Channel MOSFET, 650 V drain-source, 119 mOhm Rds(on) at 10 V, 24 A continuous, TO-220FP full-pack, 35 W dissipation.
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 24A (Tc) |
| Power dissipation | 35W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 119mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 72 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3320 pF @ 100 V |
The STF32N65M5: The TO-220FP full-pack package isolates the back tab electrically — no insulating pad needed against the heatsink — but the 35 W dissipation ceiling at case temperature means the thermal path through the plastic face limits continuous current more than a standard TO-220 would.
ST no longer manufactures this exact MDmesh V variant in the TO-220FP package.
The maximum on-resistance is 119 mOhm at 10 V gate drive with 12 A drain current.
The STF32N65M5 uses the TO-220FP (full-pack) package, which has the same pin footprint as a standard TO-220 but with a fully molded plastic back — no exposed metal tab. It is pin-compatible for the three leads, but the thermal and isolation characteristics differ: the full-pack version does not require an insulating washer but has higher thermal resistance to the heatsink.