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STMicroelectronics STF30NM60N — Discrete Semiconductors

STF30NM60N N-Channel MOSFET, 600 V, 25 A, TO-220FP

MPNSTF30NM60N
Obsolete

STMicroelectronics MDmesh™ II series, STF30NM60N, N-Channel MOSFET, 600 V Vdss, 25 A Id, 130 mOhm Rds(on) at 12.5 A, 10 V, TO-220-3 Full Pack through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF30NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation40W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs130mOhm @ 12.5A, 10V
Gate charge (Qg) (Max) @ vgs91 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2700 pF @ 50 V

Product details

600 V MDmesh™ II MOSFET in a full-pack through-hole package

The 600 V Vdss rating suits this part for offline power supplies, PFC stages, and 400 V DC-link converters where the bus voltage typically sits around 380 V to 400 V. The 25 A continuous drain current gives headroom for designs drawing 10 A to 15 A average, but the 130 mOhm Rds(on) means conduction losses will be around 16 W at 12.5 A — the 40 W power dissipation limit in the TO-220FP package means you'll need a good heatsink or forced airflow to keep the junction below 150°C. Gate charge of 91 nC at 10 V is moderate; a gate driver capable of sourcing and sinking a few amps will keep switching edges clean.

STMicroelectronics lists the STF30NM60N as obsolete.

Frequently asked questions

Is STF30NM60N still available for purchase?

Yes, the STF30NM60N is available for purchase through independent distribution channels. Because it is obsolete, it is sourced from surplus and broker inventory. Submit an RFQ for current availability and pricing — stock levels and lead times are confirmed at quote time.