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STMicroelectronics STF30NM50N — Discrete Semiconductors

STF30NM50N N-Channel MOSFET, 500 V, 27 A, MDmesh II

MPNSTF30NM50N
Obsolete

STMicroelectronics MDmesh™ II N-Channel MOSFET, 500 V Vdss, 27 A Id, 115 mOhm Rds(on) at 10 V, TO-220-3 Full Pack (TO-220FP) through-hole package, 40 W power dissipation.

STMicroelectronics STF30NM50N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF30NM50N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C27A (Tc)
Power dissipation40W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs115mOhm @ 13.5A, 10V
Gate charge (Qg) (Max) @ vgs94 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2740 pF @ 50 V

Product details

Gate charge of 94 nC at 10 V means a moderate driver load; a standard 1 A gate driver will switch it in the tens of nanoseconds range.

TO-220FP — isolated tab saves assembly steps

The fully encapsulated TO-220FP package (ST's code for TO-220 Full Pack) has the metal tab completely covered in moulding compound. No insulating pad or shoulder washer is needed when mounting to a heatsink — the package itself provides isolation. The 40 W dissipation rating reflects that; expect a higher junction-to-case thermal rise than a non-isolated TO-220 at the same power level.

Frequently asked questions

What is the Rds(on) of STF30NM50N?

The maximum Rds(on) is 115 mOhm at a drain current of 13.5 A and gate-source voltage of 10 V.

What is the maximum drain current of STF30NM50N?

The continuous drain current rating is 27 A at a case temperature of 25°C.