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STMicroelectronics STF2NK60Z — Discrete Semiconductors

STF2NK60Z N-Channel MOSFET, 600 V, 1.4 A, TO-220FP

MPNSTF2NK60Z
Obsolete

STMicroelectronics SuperMESH™ N-Channel MOSFET, 600 V Vdss, 1.4 A continuous drain, 8 Ω Rds(on) at 10 V, TO-220-3 Full Pack through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF2NK60Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.4A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs8Ohm @ 700mA, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds170 pF @ 25 V

Product details

The STF2NK60Z is an N-Channel MOSFET with 600 V drain-to-source voltage and 1.4 A continuous drain current. On-resistance is 8 Ω maximum at 700 mA and 10 V gate drive.

Gate charge and capacitance — switching performance at a glance

These numbers are low enough that a simple gate-drive resistor and a small-signal MOSFET driver can handle the switching transitions without excessive crossover loss. The 4.5 V gate threshold maximum at 50 µA drain current means the device turns on fully with standard 10 V logic-level drive.

Temperature range and thermal limits

The TO-220FP's full-pack construction means the back of the package is electrically isolated, so the heatsink does not need an insulating interface — just a thermal compound and a mechanical clamp.

Frequently asked questions

Is STF2NK60Z obsolete?

Yes, STF2NK60Z is listed as obsolete by STMicroelectronics. No official replacement part number is provided in the lifecycle record.

What is the alternative for STF2NK60Z?

For a functionally similar replacement, look for a 600 V N-channel MOSFET in a TO-220FP package with comparable Rds(on) and gate charge — but verify the footprint and thermal interface before substituting.