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STMicroelectronics STF2N80K5 — Discrete Semiconductors

STF2N80K5 MOSFET, N-Channel 800V 2A TO-220FP, SuperMESH5

MPNSTF2N80K5
Active

STMicroelectronics STF2N80K5, SuperMESH5™ N-channel MOSFET, 800 V Vdss, 2 A continuous drain, 4.5 Ohm Rds(on) at 1 A, 10 V, 3 nC gate charge, TO-220-3 Full Pack, -55 to 150 °C.

$1.4100Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF2N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs4.5Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds95 pF @ 100 V

Product details

800 V N-channel in a fully isolated TO-220FP

The STF2N80K5 is an 800 V, 2 A N-channel MOSFET from ST's SuperMESH5™ series, built for off-line power conversion and auxiliary supply stages where high-voltage margin and low gate charge matter. The TO-220FP full-pack package isolates the back tab electrically, so you skip the mica washer and bushings when bolting to a chassis heatsink — one less assembly step and a lower thermal resistance path to ground.

The 3 nC typical gate charge at 10 V keeps the driver stage small; a 100 mA gate-drive source charges it in 30 ns, which suits flyback converters switching in the 65–100 kHz range. Input capacitance is 95 pF at 100 V drain-source, so the switching node rings less than with higher-Ciss parts, and the driver sees a light capacitive load. The 5 V maximum gate threshold at 100 µA drain means logic-level drive (5 V logic) will barely turn it on — plan for a 10 V gate rail to get the rated Rds(on).

The TO-220FP package is a through-hole, fully moulded case — no exposed metal tab, so the mounting screw does not need an insulating shoulder washer. Power dissipation is 20 W at case temperature; derate above 25 °C per the datasheet curve.

Frequently asked questions

Is STF2N80K5 obsolete or end-of-life?

It is safe to qualify into new designs.

What is the Rds(on) of STF2N80K5 at 1 A?

The maximum on-resistance is 4.5 Ohm at 1 A drain current with 10 V gate drive. This is the figure to use for conduction-loss calculations at full load.