620 V, 2.2 A N-channel in a fully isolated TO-220FP
The STF2N62K3 is a 620 V, 2.2 A N-channel MOSFET from ST's SuperMESH3™ series, housed in a TO-220 Full Pack (TO-220FP) package. The fully molded plastic body provides galvanic isolation between the die and the heatsink tab — no insulating pad or washer is needed when mounting to a grounded chassis, which simplifies assembly and reduces thermal interface resistance.
On-resistance and conduction loss at the operating point
Maximum on-resistance is 3.6 Ω at Vgs = 10 V and Id = 1.1 A. At the full 2.2 A continuous drain current, conduction loss is I²R = 2.2² × 3.6 ≈ 17.4 W, which sits just under the 20 W package limit at Tc = 25 °C — so the thermal design must keep the case temperature in check to avoid exceeding the dissipation ceiling. Gate charge is 15 nC at Vgs = 10 V, and input capacitance is 340 pF at Vds = 50 V. These are modest numbers that a small-signal gate driver can handle without excessive switching losses at moderate frequencies — expect clean edges up to a few tens of kHz.