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STMicroelectronics STF28NM50N — Discrete Semiconductors

STF28NM50N N-Channel MOSFET, 500V 21A TO-220FP, MDmesh II

MPNSTF28NM50N
Active

STMicroelectronics MDmesh™ II, N-Channel MOSFET, 500 V Drain-Source, 21 A Continuous Drain at 25°C, 158 mOhm Rds(on) at 10.5 A 10 V, 50 nC Gate Charge, TO-220-3 Full Pack, Through Hole.

$6.1400Ref. price · indicative, final on quote
STMicroelectronics STF28NM50N datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF28NM50N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation35W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs158mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1735 pF @ 25 V

Product details

500 V MDmesh™ II — offline power switch in a full-pack TO-220

The STF28NM50N is an N-channel 500 V, 21 A MOSFET in a TO-220FP full-pack package.

Full-pack isolation — no mounting hardware needed

The TO-220 Full Pack (TO-220FP) package has a fully isolated tab — the back of the package is the heatsink interface, electrically isolated from the drain. The through-hole mounting suits wave-solder assembly on a single-sided or double-sided PCB. Maximum power dissipation is 35 W at the case, which means a heatsink with adequate thermal resistance is required for any load above a few amps continuous.

Switching loss and gate drive budget

It is ROHS3 compliant.

Frequently asked questions

Where can I buy the STF28NM50N and what is the current price?

The STF28NM50N is available to order through independent distribution. No stock-holding or firm price is published here.

What is the Rds(on) of the STF28NM50N?

The maximum Rds(on) is 158 mOhm at a drain current of 10.5 A with a 10 V gate-source drive. This is the value used for conduction loss calculations at rated current.