600 V N-Channel MOSFET in the TO-220FP package
At 12 A, the dissipation is I²R = 21.6 W, which must be managed within the 30 W package limit. The total gate charge of 37 nC at 10 V determines the drive energy per switching cycle; paired with the input capacitance of 1370 pF at 100 V drain-source, the Miller plateau region dominates the switching transition time. For a 100 kHz hard-switched converter, the gate-drive loss is roughly Qg × Vgs × fsw = 37 nC × 10 V × 100 kHz = 37 mW, negligible next to conduction loss, but the turn-on and turn-off delays set by the gate resistance and driver source/sink current will shape the switching edges and EMI.
STMicroelectronics lists the STF28N60M2 as Active. The base product number STF28 covers multiple Rds(on) and package variants within the same 600 V MDmesh II Plus family, so if a future design requires a different on-resistance or current rating, the footprint and gate-drive voltage remain consistent across the series.
