600 V N-Channel power MOSFET in TO-220 Full Pack
The STF28N60DM2 is a 600 V N-Channel power MOSFET from STMicroelectronics' MDmesh™ DM2 series, designed for high-voltage switching applications. Typical applications include power factor correction (PFC) stages, hard-switching DC-DC converters, and auxiliary flyback supplies in industrial and telecom power systems.
On-resistance and gate charge — switching loss trade-off
With an Rds(on) of 160 mOhm at 10 V gate drive, this MOSFET keeps conduction losses manageable in the 5–10 A load range typical of a 300–600 W PFC stage. The 34 nC total gate charge at 10 V means the gate driver does not need to source a large peak current — a standard 1 A driver can switch it in the 50–100 kHz range without excessive cross-conduction. The input capacitance of 1500 pF at 100 V drain-source is moderate, so the switching node slew rate can be tuned with a simple gate resistor. For designs where efficiency at light load matters, the MDmesh DM2 process keeps the output capacitance (Coss) related losses lower than older planar or trench generations.
Temperature range and thermal design
The TO-220FP package dissipates up to 30 W at the case, but the plastic full-pack body has higher thermal resistance than a standard TO-220 with a metal tab. The 150°C absolute maximum gives headroom for surge events and short-duration overloads.
The base product number STF28 covers a family of voltage and current variants; if a different Rds(on) or current rating is needed, the STF28N60DM2 sits in the middle of the range and is the most commonly stocked option.