600 V, 20 A N-channel power MOSFET in a full-pack TO-220
On-resistance and gate drive — what 163 mOhm at 10 V means
Rds(on) is specified at 163 mOhm maximum with a 10 V gate-source voltage and 10 A drain current. That 10 V drive level is the recommended operating point for minimum on-resistance; the device is not characterised for logic-level gate thresholds. With a maximum gate threshold of 4.75 V at 250 µA, a 10 V rail is the practical choice to fully enhance the channel and keep conduction losses predictable across temperature. These numbers are moderate for a 600 V, 20 A device — the gate driver sees a manageable load, and switching losses at frequencies up to 100 kHz are reasonable for a hard-switched converter.
Full-pack package — the isolated tab advantage
The TO-220FP (full-pack) moulded body isolates the mounting tab from the drain, so the heatsink can be grounded or left floating without an insulating pad. This is a common choice in offline power supplies and motor drives where the heatsink is tied to earth or chassis ground. The package is through-hole mounted, which suits single-sided boards and hand-assembly or rework.