STMicroelectronics FDmesh™ II series, N-Channel MOSFET, 600 V drain-source, 21 A continuous drain, 175 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through-hole package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | FDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 21A (Tc) |
| Power dissipation | 35W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 175mOhm @ 10.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 54.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1817 pF @ 100 V |
The STF26NM60ND: TO-220-3 Full Pack (TO-220FP) through-hole package, N-Channel, 600 V Vdss, 21 A Id, 175 mOhm Rds(on) at 10 V, 54.6 nC Qg.
Buyers should evaluate a pin-compatible replacement or second-source option for new designs.
600 V Vdss, 175 mOhm Rds(on) at 10 V, 21 A Id, 35 W package power, 54.6 nC gate charge.
STMicroelectronics has not published an official replacement for the STF26NM60ND. Buyers should evaluate a pin-compatible alternative from the same FDmesh™ II family or a similar 600 V N-channel MOSFET in a TO-220FP package.