STMicroelectronics MDmesh II N-Channel MOSFET, STF26NM60N, 600 V drain-source, 20 A continuous drain, 165 mOhm Rds(on) at 10 V, TO-220FP full-pack through-hole package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 35W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 165mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 50 V |
Gate charge totals 60 nC at 10 V. Power dissipation is capped at 35 W at the case. Input capacitance is 1800 pF at 50 V drain-source.
ST lists the STF26NM60N as active product with ROHS3 compliance.
The maximum Rds(on) is 165 mOhm, specified at 10 A drain current with 10 V gate drive. This is the condition for the rated on-resistance; lower gate drive voltages will increase the effective Rds(on).