STF26N60DM6

STMicroelectronics

STMicroelectronics MDmesh™ DM6 series, N-Channel MOSFET, 600 V Vdss, 18 A continuous drain at 25°C, 195 mOhm Rds(on) at 10 V, 24 nC gate charge, TO-220-3 Full Pack (TO-220FP), -55°C to 150°C junction temperature.

STMicroelectronics STF26N60DM6
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Technical specifications

STF26N60DM6 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ DM6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs195mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds940 pF @ 100 V

Technical details

STF26N60DM6
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