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STMicroelectronics STF26N60DM6 — Discrete Semiconductors

STF26N60DM6 N-Channel MOSFET, 600 V, 18 A, TO-220FP

MPNSTF26N60DM6
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STMicroelectronics MDmesh™ DM6 series, N-Channel MOSFET, 600 V Vdss, 18 A continuous drain at 25°C, 195 mOhm Rds(on) at 10 V, 24 nC gate charge, TO-220-3 Full Pack (TO-220FP), -55°C to 150°C junction temperature.

$3.9300Ref. price · indicative, final on quote
STMicroelectronics STF26N60DM6 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF26N60DM6 specifications
ParameterValue
SeriesMDmesh™ DM6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs195mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds940 pF @ 100 V

Product details

600 V N-channel MOSFET from the MDmesh DM6 family

The STF26N60DM6: Housed in a TO-220-3 Full Pack (TO-220FP) through-hole package, the mounting tab is electrically isolated from the die.

Gate charge is 24 nC at 10 V.

Package and thermal: TO-220FP with isolated tab

The TO-220FP (Full Pack) package has a plastic encapsulation that electrically isolates the mounting tab from the drain. The maximum power dissipation is 30 W at case temperature, which means a properly sized heatsink is required for any continuous operation above a few amps. The through-hole mounting suits point-of-load or bulk-capacitor-laden boards where vibration resistance and mechanical retention matter.

For dual-sourcing, the closest parametric match within the ST MDmesh DM6 family shares the same package and voltage rating — verify gate charge and Rds(on) differences against your switching frequency before substituting.

Frequently asked questions

What is the Rds(on) of the STF26N60DM6?

The maximum Rds(on) is 195 mOhm at 9 A drain current and 10 V gate drive. This is the value to use for conduction-loss calculations at the typical operating point.