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STMicroelectronics STF25NM60ND — Discrete Semiconductors

STF25NM60ND N-Channel MOSFET, 600 V, 21 A, TO-220FP

MPNSTF25NM60ND
Obsolete

STMicroelectronics FDmesh™ II, N-Channel MOSFET, 600 Vdss, 21 A Id (Tc), 160 mOhm Rds(on) @ 10.5 A, 10 V, TO-220-3 Full Pack, Through Hole, ±25 Vgs max, 80 nC Qg @ 10 V, 2400 pF Ciss @ 50 V.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF25NM60ND specifications
ParameterValue
SeriesFDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation40W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 50 V

Product details

The STF25NM60ND: The TO-220FP full-pack package provides a fully isolated tab, simplifying heatsink mounting without an insulating pad.

For existing BOM lines, the only sourcing channel is the independent distribution market — surplus inventory, last-time-buy remnants, or broker stock.

The 600 V Vdss gives a solid voltage margin for universal-input (85–265 VAC) power supplies, where the rectified DC bus peaks around 375 V. The 21 A continuous drain current is rated at case temperature 25°C — derating is significant at elevated case temperatures, so the actual usable current in a 100°C case environment will be lower. Gate charge of 80 nC at 10 V is moderate; a standard gate-driver IC can switch it in the 50–100 kHz range without excessive drive losses. Input capacitance of 2400 pF at 50 V Vds is typical for this voltage class and sets the switching loss contribution from the Miller plateau.

Frequently asked questions

Is STF25NM60ND obsolete?

Yes, STMicroelectronics lists the STF25NM60ND as obsolete. It is not recommended for new designs, and existing BOM lines should plan for an alternative.

What is the replacement for STF25NM60ND?

A parametric replacement would need to be a 600 V N-channel MOSFET in a TO-220FP package with comparable Rds(on) and gate charge. The STB25NM60ND is a surface-mount variant (D²PAK) and is not pin-compatible with the through-hole TO-220FP.