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STMicroelectronics STF25NM60N — Discrete Semiconductors

STF25NM60N N-Channel MOSFET, 600 V, 21 A, MDmesh II

MPNSTF25NM60N
Obsolete

STMicroelectronics STF25NM60N, N-Channel MOSFET, MDmesh™ II series, 600 Vdss, 21 A continuous drain, 160 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through-hole package.

$6.9200Ref. price · indicative, final on quote
STMicroelectronics STF25NM60N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF25NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation40W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs84 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 50 V

Product details

600 V N-channel MOSFET for high-voltage switching

The TO-220 Full Pack (TO-220FP) package has an isolated tab, which simplifies heatsink mounting without an insulating pad but limits power dissipation to 40 W at case temperature — about half what a standard TO-220 with exposed tab can handle.

STMicroelectronics lists the STF25NM60N as obsolete.

Gate charge and switching considerations

The input capacitance measures 2400 pF at 50 V drain-source. A gate driver capable of sourcing and sinking a few hundred milliamps will switch the STF25NM60N cleanly in a hard-switched converter running at 50–100 kHz. The 4 V gate threshold at 250 µA means the device is fully enhanced with a standard 10 V gate drive; logic-level drive at 5 V is not recommended because the Rds(on) will be significantly higher than the 160 mOhm spec.

Frequently asked questions

Is STF25NM60N obsolete?

Yes, STMicroelectronics has marked the STF25NM60N as obsolete. There is no direct pin-compatible replacement announced. Sourcing is through the surplus and broker channel.

What is the Rds(on) of STF25NM60N?

The maximum on-resistance is 160 mOhm at a drain current of 10.5 A and a gate-source voltage of 10 V.

Can I use STF25NM60N in a TO-220 package?

The STF25NM60N comes in a TO-220 Full Pack (TO-220FP) package, which has the same lead pitch and body outline as a standard TO-220 but with a fully molded, isolated tab. It fits the same PCB footprint and heatsink hole pattern, but the thermal performance differs — the isolated tab cannot dissipate heat through the heatsink as effectively as a standard TO-220 with a metal tab.

What is the replacement for STF25NM60N?

STMicroelectronics has not published an official successor order code for the STF25NM60N. For a drop-in replacement, the surplus channel is the only option. For a new design, a current-production 600 V, 21 A N-channel MOSFET in TO-220FP from ST's MDmesh series would be the parametric equivalent, but the exact pinout and footprint should be verified against the datasheet.