The STF25NM50N: The device is built on ST's MDmesh™ II technology, which reduces on-resistance and gate charge compared to planar MOSFETs of the same voltage class.
140 mOhm on-resistance and 84 nC gate charge — sizing the drive and thermal budget
At 22 A continuous drain, conduction loss (I²R) reaches 68 W at the Rds(on) maximum — exceeding the 40 W package power dissipation limit, so the device must be operated with derating or in pulsed applications where average current stays within the SOA. Input capacitance is 2565 pF at 25 V drain-source, which influences the drive circuit's turn-on delay and the Miller plateau duration.
