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STMicroelectronics STF24N65M2 — Discrete Semiconductors

STF24N65M2 N-Channel MOSFET, 650 V, 16 A, MDmesh M2

MPNSTF24N65M2
Active

STMicroelectronics STF24N65M2, MDmesh™ M2 series, N-channel MOSFET, 650 V Vdss, 16 A Id, 230 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, -55°C to 150°C.

$2.8600Ref. price · indicative, final on quote
STMicroelectronics STF24N65M2 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ M2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF24N65M2 specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs230mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1060 pF @ 100 V

Product details

650 V N-channel MOSFET in TO-220FP — conduction and switching parametrics

Gate charge totals 29 nC at 10 V.

The TO-220FP package has a 30 W power dissipation ceiling.

The 150°C maximum junction allows operation in sealed enclosures with limited airflow, provided the thermal resistance of the TO-220FP-to-heatsink interface is accounted for in the design.

It is ROHS3 compliant, with no exemptions that would restrict its use in new designs bound for EU markets. The base product number is STF24; the full order code includes the suffix for the TO-220FP variant.

Frequently asked questions

What is the maximum Vgs for STF24N65M2?

The maximum gate-to-source voltage is ±25 V. The recommended drive voltage for minimum Rds(on) is 10 V.

Is STF24N65M2 RoHS compliant?

Yes, the STF24N65M2 is ROHS3 compliant.