650 V N-channel MOSFET in TO-220FP — conduction and switching parametrics
Gate charge totals 29 nC at 10 V.
The TO-220FP package has a 30 W power dissipation ceiling.
The 150°C maximum junction allows operation in sealed enclosures with limited airflow, provided the thermal resistance of the TO-220FP-to-heatsink interface is accounted for in the design.
It is ROHS3 compliant, with no exemptions that would restrict its use in new designs bound for EU markets. The base product number is STF24; the full order code includes the suffix for the TO-220FP variant.