STMicroelectronics · MDmesh™ II Plus Series
STMicroelectronics MDmesh™ II Plus series, N-Channel MOSFET, 600 V Drain-Source, 190 mOhm Rds(on) @ 9 A, 10 V, 18 A continuous drain, TO-220-3 Full Pack, through-hole, -55°C to 150°C junction.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 190mOhm @ 9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1060 pF @ 100 V |
The on-resistance maxes out at 190 mOhm when driven with 10 V on the gate at 9 A drain current — that's the figure you use for conduction-loss calculations in a hard-switching converter.
Input capacitance is 1060 pF at 100 V drain bias.
Gate-threshold maximum is 4 V at 250 µA.
