600V N-channel with FDmesh™ II – the 180mOhm Rds(on) at 10A tells you where this lives
The STMicroelectronics STF23NM60ND is a 600V N-channel power MOSFET from the FDmesh™ II series, built for hard-switched topologies where the body diode's reverse-recovery characteristic matters. The 180mOhm max on-resistance at 10A and 10V gate drive is the number that sizes the conduction loss in a 150W to 300W PFC stage or a two-switch forward converter. The 19.5A continuous drain rating at 25°C case temperature sounds generous, but the TO-220FP full-pack package limits dissipation to 35W – so the real-world current at elevated case temperatures is what you derate from, not the headline number. The FDmesh™ II technology reduces the body diode's reverse-recovery charge and softens the turn-off waveform, which cuts EMI and switching loss in continuous-conduction-mode PFC or bridge legs.
70 nC total gate charge at 10V and 2050 pF input capacitance at 50V drain bias are the numbers the gate-driver designer needs. The 70 nC Qg means a standard 1A gate-driver IC can switch this FET in roughly 70 ns, though the TO-220FP package's internal lead inductance will add a few nanoseconds of effective rise time. The 2050 pF Ciss is moderate for a 600V 19.5A device – it doesn't force a high-side bootstrap capacitor larger than 1 µF in a half-bridge, but the Miller plateau will sit around 4V to 5V, so the gate-drive voltage needs to swing cleanly from 0V to 10V to avoid partial enhancement during the switching transition.
Active lifecycle – no LTB worry, but the full-pack package is the sourcing constraint
The TO-220FP full-pack package is a less common variant than the standard TO-220 – most distributors stock the TO-220 version in higher volume, so the TO-220FP may have longer lead times or tighter availability. If your board layout is pinned to the full-pack footprint, confirm stock before committing the BOM line.