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STMicroelectronics STF23NM60N — Discrete Semiconductors

STF23NM60N N-Channel MOSFET, 600 V, 19 A, MDmesh™ II

MPNSTF23NM60N
Obsolete

STMicroelectronics STF23NM60N, MDmesh™ II N-Channel MOSFET, 600 V Vdss, 19 A Id, 180 mOhm Rds(on), TO-220FP through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF23NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C19A (Tc)
Power dissipation35W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs180mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2050 pF @ 50 V

Product details

600 V, 19 A N-channel MOSFET in TO-220FP — MDmesh™ II

It comes in the TO-220FP full-pack through-hole package, which provides full isolation from the heatsink — no insulating pad or washer is needed, simplifying assembly and improving thermal coupling to the mounting surface.

ST officially lists the STF23NM60N as obsolete. There is no last-time-buy window still open from the factory, so new production lots are sourced through independent distribution. If this part is on your BOM, verify the date codes match your quality requirements — stock surfacing long after the official EOL date warrants extra scrutiny.

The 600 V Vdss makes the STF23NM60N a fit for offline flyback and PFC stages, 400 V bus inverters, and auxiliary power supplies where the DC link sits below 400 V. The 180 mOhm Rds(on) at 10 V gate drive is the figure for conduction loss calculations — at 9.5 A drain current it dissipates about 16 W, which the TO-220FP's 35 W power rating can handle with adequate heatsinking. Gate charge of 60 nC at 10 V is moderate; the driver sees a manageable capacitive load for switching frequencies up to the low 100 kHz range. Input capacitance of 2050 pF at 50 V Vds gives a rough Ciss figure for driver sizing.

The TO-220FP (TO-220 Full Pack) is a fully moulded through-hole package with a metal tab that is electrically isolated — no separate insulator required. The mounting hole fits a standard M3 screw. The junction temperature limit is 150°C, so derate power dissipation accordingly above 25°C case temperature.

Frequently asked questions

Is STF23NM60N obsolete?

Yes, STMicroelectronics has marked the STF23NM60N as obsolete. There is no active factory production.

What is the Rds(on) of STF23NM60N?

The maximum on-resistance is 180 mOhm at 9.5 A drain current with 10 V gate drive. This is the spec to use for conduction loss calculations at the rated operating point.