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STMicroelectronics STF22NM60ND — Discrete Semiconductors

STF22NM60ND N-Channel 600V MOSFET, AEC-Q101, TO-220FP

MPNSTF22NM60ND
Obsolete

STMicroelectronics STF22NM60ND, N-channel 600V 17A MOSFET, AEC-Q101 qualified, FDmesh II technology, 220 mOhm Rds(on) at 10V gate drive, TO-220FP full-pack through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF22NM60ND specifications
ParameterValue
SeriesAutomotive, AEC-Q101, FDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs220mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 50 V

Product details

600 V N-channel MOSFET with AEC-Q101 qualification

This is an AEC-Q101 qualified device from the automotive-grade series, designed for high-voltage power conversion in vehicle systems — DC-DC converters, PFC stages, auxiliary supplies, and motor drive inverters where the 600 V drain-source voltage handles the bus rail. These switching figures suit moderate-frequency hard-switched topologies in the 50-150 kHz range where the designer balances conduction loss against switching loss.

TO-220FP full-pack — no insulating washer needed

The TO-220FP full-pack package (also called TO-220 isolated tab) is a deliberate choice for high-voltage automotive designs. This saves a BOM line, reduces assembly steps, and eliminates the thermal interface failure point that a mica washer introduces. Maximum power dissipation is 30 W at case temperature, derated to the junction temperature limit of 150°C. The through-hole mounting suits boards where the heatsink is on the opposite side of the PCB or where mechanical retention from the bolt-through tab is preferred over surface-mount clip attachment. Gate drive voltage is specified at 10 V for both maximum and minimum Rds(on), with an absolute maximum gate-source voltage of ±25 V.

This means STMicroelectronics no longer manufactures this order code, and no last-time-buy window remains open. New-production requirements must be sourced through independent distribution channels — surplus inventory, broker stock, or franchise-distributor remaining shelf stock. For a buyer filling a BOM line in production, the obsolete status means this part cannot be specified into a new design unless the design team has already qualified it and the remaining lifecycle of the product can be covered by secured surplus inventory. Any new design-in should target a current-production replacement.

Frequently asked questions

What is the replacement for STF22NM60ND?

A functionally similar current-production part would need to be a 600 V N-channel AEC-Q101 MOSFET in a TO-220FP package, but the exact replacement depends on the application's switching frequency, gate drive voltage, and thermal budget. A design review with the manufacturer's application team or a qualified distributor is recommended to select a pin-compatible alternative from the current FDmesh II or MDmesh lineup.

Can I replace STF22NM60ND with a non-automotive MOSFET?

Technically yes, if the application does not require AEC-Q101 qualification. A non-automotive 600 V N-channel MOSFET in TO-220FP with similar Rds(on) and gate charge could function in the same circuit. However, if the original design specified the STF22NM60ND for its automotive grade, replacing it with an industrial-grade part voids any AEC-Q101 compliance claim and may fail PPAP audit requirements for automotive production.