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STMicroelectronics STF22N60M6 — Discrete Semiconductors

STF22N60M6 N-Channel MOSFET, 600V 15A, TO-220FP

MPNSTF22N60M6
Active

STMicroelectronics MDmesh™ M6 series, N-Channel MOSFET, 600 V Vdss, 15 A continuous drain, 230 mOhm Rds(on) at 10 V, 20 nC gate charge, TO-220-3 Full Pack through-hole, -55°C to 150°C junction temperature.

$1.7110Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF22N60M6 specifications
ParameterValue
SeriesMDmesh™ M6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs230mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 100 V

Product details

600 V, 15 A primary-side switch in the TO-220FP isolated package

The package-limited power dissipation is 30 W at the case, so the continuous current must be derated or the load pulsed.

20 nC gate charge — light load on the driver

The maximum gate charge is 20 nC at 10 V.

TO-220FP full-pack — isolated tab, one fewer assembly step

The TO-220FP (full-pack) package is a through-hole, three-lead format with a fully molded backside. Unlike a standard TO-220 where the metal tab is electrically connected to the drain, the full-pack variant encapsulates the tab in epoxy, providing isolation rated for the full 600 V. The trade-off is a higher junction-to-case thermal resistance than a standard TO-220, which is why the maximum power dissipation is specified at 30 W at the case — roughly half what a metal-tab TO-220 of the same die would handle. For designs that can live within that dissipation envelope, the BOM and assembly savings are real.

The base product number STF22 covers the TO-220FP variant; the M6 suffix identifies the specific generation.

Frequently asked questions

How does STF22N60M6 compare to STF22N60M2?

Both are 600 V N-channel MOSFETs in the MDmesh family with the same TO-220FP package and similar current ratings. The M6 generation typically offers lower Rds(on) and reduced gate charge compared to the M2, which translates to lower conduction and switching losses in the same footprint. The M6 is the more recent process; the M2 remains available but is the older design. For a new BOM, the M6 is the recommended choice unless the M2 is already qualified and the performance delta is not needed.