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STMicroelectronics STF21NM60N — Discrete Semiconductors

STF21NM60N N-Channel MOSFET, 600 V, 220 mOhm, TO-220FP

MPNSTF21NM60N
Obsolete

ST MDmesh™ N-Channel MOSFET, 600 V drain-source, 17 A continuous drain, 220 mOhm Rds(on) at 10 V gate drive, TO-220-3 Full Pack through-hole package.

STMicroelectronics STF21NM60N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF21NM60N specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs220mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs66 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 50 V

Product details

The STF21NM60N: The 220 mOhm Rds(on) at 8.5 A, 10 V is the conduction loss anchor for this 600 V N-Channel MDmesh MOSFET. The TO-220FP isolates the tab electrically, eliminating the need for an insulating pad.

Obsolete — planning the last-time-buy or cross-reference

ST has marked the STF21NM60N as Obsolete. The MDmesh™ series includes several 600 V N-channel devices in TO-220FP, but pin-compatibility and gate-drive thresholds should be verified against the original layout and thermal budget.

Gate charge and input capacitance — switching loss drivers

A 66 nC Qg at 10 V and 1900 pF Ciss at 50 V set the switching speed and gate-drive power requirement.

Frequently asked questions

What is the Rds(on) of STF21NM60N?

This is the figure to use for worst-case conduction loss calculations in your power stage.

Is STF21NM60N obsolete?

Yes, ST has classified the STF21NM60N as Obsolete. No factory production or last-time-buy window remains. Sourcing is through independent distribution only.