STMicroelectronics MDmesh™ II N-Channel MOSFET, 500 V Vdss, 18 A Id, 190 mOhm Rds(on) at 9 A, 10 V, 65 nC Qg, TO-220-3 Full Pack, Through Hole, 150°C junction.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 190mOhm @ 9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 65 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1950 pF @ 25 V |
The STF21NM50N is an N-channel MOSFET with 500 V Vdss, 18 A Id, and 190 mOhm Rds(on) at 9 A, 10 V. The TO-220 Full Pack isolates the tab electrically.
The gate threshold is 4 V at 250 µA drain current.
Availability is limited to surplus and broker-channel inventory.
Buyers need to find a substitute for this obsolete part to avoid redesign.
Sourcing buyers need to know if they can still buy the original part.
Design engineers must verify fit and compatibility with their circuit.
Buyers need to locate distributors with available stock.
Maintenance technicians need correct pin configuration for replacement.
Engineers validate conduction losses in their design.