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STMicroelectronics STF21N65M5 — Discrete Semiconductors

STF21N65M5 N-Channel MOSFET, 650 V, 17 A, TO-220FP

MPNSTF21N65M5
Active

STMicroelectronics MDmesh V N-Channel MOSFET, 650 V, 17 A, 190 mOhm at 10 V, 50 nC gate charge, TO-220FP through-hole full-pack, 150°C junction.

$4.7100Ref. price · indicative, final on quote
STMicroelectronics STF21N65M5 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF21N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1950 pF @ 100 V

Product details

The STF21N65M5 is an STMicroelectronics N-channel power MOSFET from the MDmesh V series, built on a multi-drain mesh technology that balances on-resistance with fast switching.

Conduction loss and the TO-220FP thermal ceiling

At 17 A the I²R loss hits 55 W, but the full-pack TO-220FP is limited to 30 W dissipation at the case — so the practical continuous current is well below the 17 A headline in any real enclosure.

Active, RoHS3, and the sourcing picture

No last-time-buy or successor has been announced.

Frequently asked questions

What is the Rds(on) of STF21N65M5 at 10 V?

Maximum Rds(on) is 190 mOhm at Vgs = 10 V and Id = 8.5 A. This is the specified drive voltage for the lowest on-resistance; driving below 10 V increases Rds(on) significantly.

Is STF21N65M5 RoHS compliant?

Yes, the STF21N65M5 is listed as ROHS3 Compliant, meeting the current EU RoHS directive requirements.