STMicroelectronics STF20N90K5, MDmesh™ K5 series, N-Channel MOSFET, 900 V drain-source, 20 A continuous drain (Tc=25°C), 250 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 250mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1500 pF @ 100 V |
The STF20N90K5: The fully isolated TO-220FP package (TO-220-3 Full Pack) eliminates the need for an insulating pad between the device and the heatsink, simplifying assembly and improving thermal coupling — the metal tab is electrically isolated, so the heatsink can share a common ground without extra hardware.
For volume BOM lines, this part is a low single-source risk as long as the MDmesh K5 platform stays active.
The maximum on-resistance is 250 mOhm at 10 V gate drive with 10 A drain current. This is the figure to use for worst-case conduction loss calculations in the switching stage.
The continuous drain current is rated at 20 A at a case temperature of 25°C. Derating is required for higher case temperatures; the device can handle 20 A only with adequate heatsinking and airflow.