STF20N65M5

STMicroelectronics

STMicroelectronics MDmesh™ V series, STF20N65M5, N-Channel MOSFET, 650 V Vdss, 18 A Id, 190 mOhm Rds(on) @ 10 V, 45 nC Qg, TO-220FP through-hole package.

STMicroelectronics STF20N65M5
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Technical specifications

STF20N65M5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1345 pF @ 100 V

Technical details

TO-220FP full-pack — one less insulator to worry about

The TO-220FP is the fully isolated version of the standard TO-220. The plastic body extends around the back tab, so the mounting surface is electrically isolated from the drain. It simplifies assembly and reduces BOM count, though the thermal resistance junction-to-case is higher than a standard TO-220 because the plastic adds a thermal barrier. The 30 W dissipation ceiling reflects that; if you need to push more current, the non-isolated TO-220 sibling (STP20N65M5) would run cooler for the same load.

STF20N65M5
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