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STMicroelectronics STF20N65M5 — Discrete Semiconductors

STF20N65M5 N-Channel MOSFET, 650 V, 18 A, MDmesh V TO-220FP

MPNSTF20N65M5
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STMicroelectronics MDmesh™ V series, STF20N65M5, N-Channel MOSFET, 650 V Vdss, 18 A Id, 190 mOhm Rds(on) @ 10 V, 45 nC Qg, TO-220FP through-hole package.

$3.3200Ref. price · indicative, final on quote
STMicroelectronics STF20N65M5 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF20N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1345 pF @ 100 V

Product details

TO-220FP full-pack — one less insulator to worry about

The TO-220FP is the fully isolated version of the standard TO-220. The plastic body extends around the back tab, so the mounting surface is electrically isolated from the drain. It simplifies assembly and reduces BOM count, though the thermal resistance junction-to-case is higher than a standard TO-220 because the plastic adds a thermal barrier. The 30 W dissipation ceiling reflects that; if you need to push more current, the non-isolated TO-220 sibling (STP20N65M5) would run cooler for the same load.

Frequently asked questions

What is the Rds(on) of the STF20N65M5?

The maximum on-resistance is 190 mOhm at 9 A drain current and 10 V gate drive. That is the figure to use for worst-case conduction loss calculations in a power supply or motor-drive output stage.

What does the STF20N65M5 datasheet say about the gate drive?

The recommended drive voltage for achieving the rated on-resistance is 10 V. The maximum gate-to-source voltage is ±25 V. The typical gate charge is 45 nC at 10 V, which is modest — a standard gate-driver IC with 1–2 A peak drive will switch it fast enough for most 65–100 kHz converters.