500 V MDmesh™ II switch in an isolated TO-220FP
Conduction and switching parametrics
Rds(on) is specified at 250 mOhm maximum with Vgs = 10 V and Id = 7 A — this is the conduction loss figure the thermal design must budget for at the operating current. The 34 nC total gate charge at 10 V is moderate for a 500 V / 14 A device; a gate driver delivering 1 A can switch the FET in roughly 34 ns, keeping crossover losses manageable in the 50–150 kHz range typical of hard-switched converters. Input capacitance Ciss is 1000 pF at Vds = 50 V, which sets the gate-drive impedance requirement for clean edges without ringing.
The TO-220FP (TO-220 Full Pack) has a fully moulded plastic body with no exposed metal tab — the back of the package is the heatsink face, electrically isolated. Maximum power dissipation is 30 W at case temperature, limited by the junction-to-case thermal resistance of the full-pack construction. For a typical 100 W PFC stage running at 70°C ambient, the designer should verify the junction temperature stays below the 150°C TJ rating.