The 4 V gate threshold at 250 µA drain current sets the turn-on edge for logic-level drive circuits.
Temperature range and package isolation
Maximum power dissipation is 25 W at case temperature.

STMicroelectronics MESH OVERLAY™ N-Channel MOSFET, STF19NF20, 200V Vdss, 15A Id, 160mOhm Rds(on) at 10V, TO-220-3 Full Pack (TO-220FP), -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MESH OVERLAY™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 160mOhm @ 7.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 800 pF @ 25 V |
The 4 V gate threshold at 250 µA drain current sets the turn-on edge for logic-level drive circuits.
Maximum power dissipation is 25 W at case temperature.
The STF19NF20 uses a TO-220 Full Pack (TO-220FP) package. The lead pitch and body dimensions match the standard TO-220 footprint, but the fully isolated tab is thicker and the mounting hole pattern may differ. Verify the heatsink interface before committing the board layout.