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STMicroelectronics STF18NM60N — Discrete Semiconductors

STF18NM60N MOSFET N-Ch 600V 13A TO-220FP, MDmesh II

MPNSTF18NM60N
Active

STMicroelectronics MDmesh™ II, STF18NM60N, N-Channel MOSFET, 600V Vdss, 13A Id, 285mOhm Rds(on), 35nC Qg, TO-220-3 Full Pack, -55°C to 150°C.

$2.8000Ref. price · indicative, final on quote
STMicroelectronics STF18NM60N datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF18NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs285mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1000 pF @ 50 V

Product details

600 V N-channel in a full-pack TO-220

285 mOhm on-resistance and 35 nC gate charge

Maximum on-resistance is 285 mOhm at 6.5 A and 10 V. Gate charge is 35 nC at 10 V. Input capacitance Ciss is 1000 pF at Vds = 50 V, a moderate value that does not demand an aggressive gate driver but still requires a proper gate loop layout to avoid ringing.

Junction temperature range and package thermal limits

Maximum power dissipation is 30 W at the case — the TO-220FP's full-plastic construction has higher thermal resistance than a standard TO-220 with a metal tab, so the heatsink design must account for the package's RthJC.

Frequently asked questions

What is the Rds(on) of STF18NM60N?

Maximum Rds(on) is 285 mOhm at a drain current of 6.5 A and a gate-source voltage of 10 V.