600 V N-channel in the MDmesh M6 generation
On-resistance and gate drive — the switching loss trade-off
Gate charge totals 16.8 nC at 10 V, a low figure for a 600 V device in this current class; that keeps the gate-drive energy per switching cycle modest and helps maintain efficiency at higher frequencies.
Package and thermal path — the TO-220FP advantage
The TO-220FP (full-pack) case isolates the back tab electrically, so the device can be bolted directly to a grounded chassis or heatsink without a sil-pad or mica washer. Through-hole mounting suits point-of-load assemblies and prototyping where rework access matters.
For BOM lines that need a qualified second source, the MDmesh M6 family includes several 600 V N-channel options in the TO-220FP footprint — the M2 generation predecessor (STF18N60M2) is a common cross-shop candidate, though the M6 offers lower typical Rds(on) and gate charge.
