STF18N60M2

STMicroelectronics · MDmesh™ II Plus Series

STMicroelectronics MDmesh II Plus STF18N60M2, N-channel 600 V MOSFET, 13 A, 280 mOhm Rds(on) at 10 V, 21.5 nC gate charge, TO-220FP full-pack, -55 to 150 °C.

STMicroelectronics STF18N60M2
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Technical specifications

STF18N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs280mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs21.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds791 pF @ 100 V

Technical details

600 V N-channel with a full-pack body — why the package matters

That saves a BOM line and eliminates the assembly step of placing a silicone pad or mica washer.

Conduction loss and gate drive budget

The typical value from the description is 0.255 Ohm — the 280 mOhm max is the number to use for worst-case thermal calculations. Gate charge is 21.5 nC at 10 V, which keeps the gate-drive power low in a 100 kHz switching regulator; a typical 1 A gate driver charges the gate in about 22 ns. Input capacitance is 791 pF at 100 V drain-source — this is the Ciss that the driver sees during the Miller plateau. The low capacitance relative to the 600 V / 13 A rating is the MDmesh II Plus design target: fast switching with reduced crossover losses in hard-switched topologies.

Thermal and temperature envelope

The 25 W ceiling means this part is not for a multi-kilowatt inverter stage — it fits auxiliary supplies, PFC stages up to about 300 W, and flyback converters where the full-pack isolation simplifies the mechanical design. The 150 °C Tj max is standard for industrial SMPS designs that see sustained load.

STF18N60M2
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