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STMicroelectronics STF18N60M2 — Discrete Semiconductors

STF18N60M2 N-Channel 600 V MOSFET, 280 mOhm, TO-220FP

MPNSTF18N60M2
Active

STMicroelectronics MDmesh II Plus STF18N60M2, N-channel 600 V MOSFET, 13 A, 280 mOhm Rds(on) at 10 V, 21.5 nC gate charge, TO-220FP full-pack, -55 to 150 °C.

$2.3800Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ II Plus
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF18N60M2 specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs280mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs21.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds791 pF @ 100 V

Product details

600 V N-channel with a full-pack body — why the package matters

That saves a BOM line and eliminates the assembly step of placing a silicone pad or mica washer.

Conduction loss and gate drive budget

The typical value from the description is 0.255 Ohm — the 280 mOhm max is the number to use for worst-case thermal calculations. Gate charge is 21.5 nC at 10 V, which keeps the gate-drive power low in a 100 kHz switching regulator; a typical 1 A gate driver charges the gate in about 22 ns. Input capacitance is 791 pF at 100 V drain-source — this is the Ciss that the driver sees during the Miller plateau. The low capacitance relative to the 600 V / 13 A rating is the MDmesh II Plus design target: fast switching with reduced crossover losses in hard-switched topologies.

Thermal and temperature envelope

The 25 W ceiling means this part is not for a multi-kilowatt inverter stage — it fits auxiliary supplies, PFC stages up to about 300 W, and flyback converters where the full-pack isolation simplifies the mechanical design. The 150 °C Tj max is standard for industrial SMPS designs that see sustained load.

Frequently asked questions

What is the Rds(on) of STF18N60M2?

The typical value is 0.255 Ohm per the product description.

STF18N60M2 vs IRF840?

The IRF840 is a 500 V, 8 A, 0.85 Ohm MOSFET in a standard TO-220 (non-isolated) package. The STF18N60M2 offers a higher 600 V drain-source rating, higher 13 A continuous current, lower 280 mOhm Rds(on), and the TO-220FP full-pack isolation. The ST part is a newer MDmesh II Plus generation with significantly lower gate charge (21.5 nC vs approximately 40 nC for the IRF840), which reduces switching losses at higher frequencies.