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STMicroelectronics STF17N80K5 — Discrete Semiconductors

STF17N80K5 N-Channel MOSFET, 800 V, 14 A, TO-220FP

MPNSTF17N80K5
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STMicroelectronics STF17N80K5, MDmesh™ K5 series, N-Channel MOSFET, 800 V Vdss, 14 A Id, 340 mOhm Rds(on), 26 nC Qg, TO-220-3 Full Pack, -55°C to 150°C.

$4.8300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF17N80K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C14A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs340mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds866 pF @ 100 V

Product details

800 V N-channel MOSFET in a fully isolated TO-220FP

Where the 800 V rating and 340 mΩ matter most

The 800 V Vdss rating gives the STF17N80K5 comfortable margin for universal-input flyback converters (typical bulk rail around 400 V) and PFC stages where the drain voltage can ring above the DC bus. The 340 mΩ Rds(on) at 10 V drive is a middle-ground figure — low enough to keep conduction losses reasonable in a 14 A part, but not so low that the gate charge penalty climbs. The 26 nC total gate charge means a small gate-drive transformer or a simple driver IC can switch it at 100 kHz without excessive drive losses.

Frequently asked questions

Can the STF17N80K5 be used in a 400 V flyback converter?

Yes. The 800 V drain-to-source voltage rating provides more than 2× derating margin on the typical 400 V bulk rail in a universal-input flyback, which is standard practice for reliable operation. The 14 A current rating and 340 mΩ Rds(on) suit the primary-side switch role in flyback converters up to several hundred watts.

What is the difference between the STF17N80K5 and the STF17N80K4?

Both are 800 V N-channel MOSFETs in the MDmesh family, but the K5 series is a later-generation process with lower gate charge and improved switching performance. The STF17N80K5 has a gate charge of 26 nC at 10 V, which is lower than the K4 variant, reducing drive losses in high-frequency designs. The package, pinout, and current ratings are the same, so the K5 is a direct drop-in replacement with better efficiency.