STF17N80K5

STMicroelectronics

STMicroelectronics STF17N80K5, MDmesh™ K5 series, N-Channel MOSFET, 800 V Vdss, 14 A Id, 340 mOhm Rds(on), 26 nC Qg, TO-220-3 Full Pack, -55°C to 150°C.

STMicroelectronics STF17N80K5
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[IN STOCK] In Stock: 5 pcs
$10.87/ pc

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Technical specifications

STF17N80K5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C14A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs340mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds866 pF @ 100 V

Technical details

800 V N-channel MOSFET in a fully isolated TO-220FP

Where the 800 V rating and 340 mΩ matter most

The 800 V Vdss rating gives the STF17N80K5 comfortable margin for universal-input flyback converters (typical bulk rail around 400 V) and PFC stages where the drain voltage can ring above the DC bus. The 340 mΩ Rds(on) at 10 V drive is a middle-ground figure — low enough to keep conduction losses reasonable in a 14 A part, but not so low that the gate charge penalty climbs. The 26 nC total gate charge means a small gate-drive transformer or a simple driver IC can switch it at 100 kHz without excessive drive losses.

STF17N80K5
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