620 V, 15.5 A N-channel MOSFET in TO-220FP — SuperMESH3™ series
The STMicroelectronics STF17N62K3 is a 620 V, 15.5 A N-channel power MOSFET from the SuperMESH3™ family, built with a metal-oxide semiconductor structure. The part is designed for high-voltage switching applications such as off-line power supplies, adapters, and lighting ballasts where the 620 V drain-source breakdown voltage gives adequate derating for universal-input (85–265 VAC) flyback or forward converters.
Rds(on) and gate drive — 340 mOhm at 10 V
Maximum on-resistance is 340 mOhm at a drain current of 7.5 A with 10 V gate drive. Gate charge is 105 nC at 10 V, which is moderate for this voltage class — a gate-drive IC capable of sourcing at least 1 A peak will keep switching losses under control at frequencies up to about 100 kHz. Input capacitance is 3100 pF at 50 V drain-source, a figure to include in the gate-drive power budget.
Obsolete — no official successor on record
Sourcing is limited to independent distribution and surplus inventory — we can quote against an RFQ from our multi-source network. Buyers should verify stock and pricing at the time of inquiry, as availability is batch-dependent.
