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STMicroelectronics STF16N65M5 — Discrete Semiconductors

STF16N65M5 STMicro N-Ch 650V 12A TO-220FP MOSFET

MPNSTF16N65M5
Active

STMicroelectronics STF16N65M5, MDmesh™ V N-Channel MOSFET, 650V Vdss, 12A Id, 299mOhm Rds(on), TO-220-3 Full Pack (TO-220FP), Tube.

$3.1300Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF16N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs299mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1250 pF @ 100 V

Product details

650 V, 12 A MDmesh V — conduction-loss optimised for offline power

The STF16N65M5 is an N-channel power MOSFET from ST's MDmesh™ V series, rated for 650 V drain-source breakdown and 12 A continuous drain current at 25°C case temperature. The 299 mOhm maximum on-resistance at 6 A, 10 V gate drive is the headline figure for conduction-loss budgeting in a 650 V class part — lower than the M2-generation peers at the same voltage rating, which makes this device a fit where the switching frequency is moderate and the dominant loss is I²R.

Gate charge and switching-speed trade-off

Total gate charge Qg is 45 nC at 10 V gate drive — roughly 2.3× that of the M2-generation STF16N65M2 (19.5 nC). The M5 series achieves lower Rds(on) by using a thicker epitaxial layer, which stores more charge in the drift region; the buyer's trade-off is higher gate-drive current at the target switching frequency. For a 100 kHz hard-switched PFC stage, the average gate current is 4.5 mA (45 nC × 100 kHz), well within a typical driver's capability, but the switching loss per cycle is proportionally higher. Input capacitance Ciss is 1250 pF at 100 V drain-source — a moderate figure for the voltage class. The Miller plateau charge is not separately listed, but the Qgd / Qgs ratio typical of MDmesh V devices keeps the turn-on delay within a few tens of nanoseconds when driven from a standard 10 V gate signal.

TO-220FP — isolated tab, no washer needed

The TO-220 Full Pack (TO-220FP) package has the die mounted on a fully moulded plastic tab — the backside metal is not electrically connected to the drain. This eliminates the need for a silicone pad or mica washer when bolting the device to a heatsink, simplifying assembly and reducing thermal interface resistance. The penalty is a higher junction-to-case thermal resistance than a standard TO-220; the rated power dissipation is 25 W at case temperature, so the thermal budget must account for the full-pack derating.

Active lifecycle and sourcing posture

The STF16N65M5 carries an active lifecycle status — no NRND or EOL flags from STMicroelectronics. ROHS3 compliant per the evidence. Sourced to order against BOM quantities through independent distribution; availability and current pricing confirmed at RFQ.

Frequently asked questions

Will STF16N65M5 drop into a board that was specified around STF16N60M2?

The STF16N65M5 and STF16N60M2 share the same TO-220FP footprint and pinout (gate, drain, source). The key differences are the 650 V vs 600 V breakdown, 299 mOhm vs 320 mOhm Rds(on), and 45 nC vs 19 nC Qg. The higher gate charge of the M5 may require a gate-driver current adjustment at the same switching frequency; the thermal and capacitive loads are otherwise compatible without a board spin.