650 V, 11 A N-channel in a fully isolated TO-220FP
That saves assembly time and improves thermal transfer, but the package limits power dissipation to 25 W at case temperature.
Switching loss and drive budget
Total gate charge is 19.5 nC at 10 V, and input capacitance is 718 pF at 100 V drain-source. These numbers are moderate for a 650 V device — the gate driver doesn't need to be oversized. The maximum gate-source rating is ±25 V, which leaves margin for ringing on the gate node in a hard-switching topology.
The TO-220FP body is moulded epoxy with a flat back — it reflows cleanly under hot air if you need to remove it, but the full-pack construction means the die is fully encapsulated, so the part survives a rework cycle without cracking the epoxy.