STMicroelectronics UltraFASTmesh™, STF16N60M6, N-Channel MOSFET, 600 V Vdss, 12 A Id, 320 mOhm Rds(on), TO-220-3 Full Pack, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | UltraFASTmesh™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 320mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 575 pF @ 100 V |
Input capacitance is 575 pF at 100 V drain-source — a modest figure that helps the driver stage maintain clean edges without excessive ringing. The gate threshold voltage maximum is 4.75 V at 250 µA, so a 10 V drive rail ensures the device is fully enhanced.
The STW16N60M6 is a different package variant (standard TO-247, not the full-pack TO-220FP). The die may be the same, but the package footprint and thermal performance differ — verify the mounting hole pattern and heatsink interface before substituting.
Typical values are lower, but the datasheet maximum is the figure to use for worst-case conduction loss calculations.
The evidence does not list a gate protection diode as a feature. Standard ESD protection is inherent in the gate oxide, but for handling during assembly, observe ESD precautions — the gate is a high-impedance node.
Yes — the 600 V rating, low gate charge (16.7 nC), and fast switching characteristics make it well suited for hard-switched topologies such as flyback, forward, and PFC stages in power supplies up to a few hundred watts.