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STMicroelectronics STF16N60M2 — Discrete Semiconductors

STF16N60M2 MOSFET N-CH 600V 12A TO-220FP, MDmesh M2

MPNSTF16N60M2
Active

STMicroelectronics STF16N60M2, MDmesh M2 series, N-channel MOSFET, 600V Vdss, 12A Id, 320mOhm Rds(on) at 10V, 19nC Qg, TO-220-3 Full Pack through-hole package, 150°C junction temperature.

$1.9600Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ M2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF16N60M2 specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs320mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds700 pF @ 100 V

Product details

600 V N-channel in an isolated full-pack

The STF16N60M2 is a 600 V, 12 A N-channel power MOSFET from ST's MDmesh M2 series, housed in a TO-220FP full-pack through-hole package. It targets offline switched-mode power supplies, PFC stages, and resonant converters where the isolated tab simplifies heatsinking and eliminates the insulating pad.

Conduction and switching losses at the operating point

At 12 A continuous drain current the Rds(on) will be higher due to self-heating; the 25 W dissipation ceiling in the TO-220FP package is the practical thermal limit, not the 12 A current rating. Total gate charge is 19 nC at 10 V. Input capacitance is 700 pF at 100 V drain-source.

Full-pack package simplifies thermal design

No insulating pad or washer is needed, which reduces assembly steps and improves thermal contact consistency. The trade-off is higher thermal resistance compared to a standard TO-220 — the 25 W power dissipation limit reflects this. The full-pack construction means the case temperature rises faster than a metal-tab package; derate power dissipation above 25 °C case temperature per the datasheet curve.

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of the STF16N60M2 at the rated operating point?

This is the conduction loss floor for the 600 V, 12 A rated device.