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STMicroelectronics STF16N50U — Discrete Semiconductors

STF16N50U N-Channel MOSFET, 500 V, 15 A, TO-220FP, Obsolete

MPNSTF16N50U
Obsolete

STMicroelectronics UltraFASTmesh™ series, STF16N50U, N-Channel MOSFET, 500 V Vdss, 15 A Id, 520 mOhm Rds(on) at 10 V, 40 nC Qg, TO-220-3 Full Pack, Through Hole.

$5.4100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF16N50U specifications
ParameterValue
SeriesUltraFASTmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs520mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1950 pF @ 25 V

Product details

500 V, 15 A N-channel MOSFET in a fully isolated TO-220FP

The device is designed for hard-switching topologies in offline power supplies, flyback converters, PFC stages, and lighting ballasts where 500 V blocking capability and moderate conduction losses are required.

The 500 V Vdss rating gives a comfortable derating margin for universal-input (85–265 VAC) offline converters, where the reflected voltage on the primary-side MOSFET typically peaks around 400–450 V after leakage-inductance spikes. Gate charge is 40 nC at 10 V, a moderate figure that a standard gate-driver IC or a simple discrete driver can switch without excessive cross-conduction losses. Input capacitance is 1950 pF at 25 V drain-source, which together with the gate charge gives a reasonable switching speed for frequencies up to about 100 kHz in a typical flyback or forward converter.

Obsolete — what this means for procurement

Buyers should evaluate a pin-compatible replacement or a functionally equivalent MOSFET from the same voltage and current class for new designs.

The TO-220FP full-pack package is a through-hole, three-lead format with a fully molded back — no exposed metal tab. In a typical offline supply, the device is bolted to a heatsink with a screw through the mounting hole; thermal compound is still recommended between the package back and the heatsink surface.

Frequently asked questions

What is the replacement for STF16N50U?

No official replacement order code is listed by STMicroelectronics for the STF16N50U. For a functionally equivalent part, look for a 500 V, 15 A N-channel MOSFET in a TO-220FP package with similar Rds(on) and gate charge. The STF16N50M is a related variant in the same UltraFASTmesh™ family, but its datasheet should be checked for parametric differences before substitution. For new designs, consider current-production 500 V MOSFETs from ST's MDmesh™ series or equivalent offerings from Infineon, onsemi, or Vishay.

What is the Rds(on) of STF16N50U?

The maximum on-resistance is 520 mOhm at 5 A drain current and 10 V gate drive. This is the value used for conduction loss calculations in the design.

Where can I buy STF16N50U?

The STF16N50U is obsolete and not available through standard distribution. It is sourced through independent and surplus distribution channels. Submit an RFQ for current availability and pricing, which are confirmed at quote time.