Active BOM fit for 500 V switching
The STF16N50M2: This is a through-hole device in the TO-220 Full Pack package, which isolates the mounting tab electrically — no insulating washer needed against the heatsink.
Rds(on) at junction temperature, not 25°C
That number is at 25°C junction — the real Rds(on) at 125°C junction roughly doubles, so budget 500-560 mOhm in the conduction loss calculation for a 100°C+ heatsink. The 19.5 nC total gate charge (Qg) at 10 V gives a figure of merit (Rds(on) × Qg) of about 5.5 nC·Ohm, competitive for this voltage class and useful for estimating switching loss in hard-switched topologies.
Switching loss and driver sizing
Input capacitance Ciss is 710 pF at 100 V Vds — a moderate value that keeps the gate drive current requirement manageable. The ±25 V maximum gate-source rating gives headroom for driving with a 12-15 V gate signal without approaching the breakdown.
Thermal budget in the Full Pack
The TO-220 Full Pack package has higher thermal resistance than the standard TO-220 because the plastic encapsulates the die on all sides — expect RthJC around 5-6 °C/W. At 125°C junction limit, the usable continuous dissipation drops to about 20 W. A 100°C case temperature under full load leaves only about 8 W margin before hitting the 150°C junction maximum.
Sourcing and compliance posture
STMicroelectronics lists the STF16N50M2 as Active product status. It is RoHS3 compliant.