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STMicroelectronics STF15NM65N — Discrete Semiconductors

STF15NM65N MOSFET, N-Ch 650V 12A TO-220FP, MDmesh II

MPNSTF15NM65N
Active

STMicroelectronics STF15NM65N, MDmesh™ II, N-Channel MOSFET, 650V Vdss, 12A Id, 380mOhm Rds(on) at 10V, TO-220-3 Full Pack (TO-220FP), -55°C to 150°C.

$4.4700Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF15NM65N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs380mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs33.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds983 pF @ 50 V

Product details

Gate charge and switching — what the 33.3 nC means at the bench

Total gate charge at 10 V is 33.3 nC, and the input capacitance (Ciss) measures 983 pF at 50 V drain bias. For a hard-switched converter running at 100 kHz, the average gate-drive current needed is about 3.3 mA — easily within a standard MOSFET driver. The low Qg relative to the 650 V class means the STF15NM65N is suited for power-factor-correction stages and flyback converters where switching losses matter.

Temperature range and rework considerations

The TO-220FP package has a larger plastic body than a standard TO-220 — the full-pack moulding adds thermal mass, so a hot-air rework station needs a higher preheat to get the solder joints flowing without cooking the die. Maximum power dissipation is 30 W at case temperature, but the actual limit depends on the heatsink and ambient. The isolated tab means the back of the part can be clamped directly to a grounded heatsink without a thermal pad.

Frequently asked questions

What is the Rds(on) of the STF15NM65N?

Maximum on-resistance is 380 mOhm at 6 A drain current with 10 V gate drive. This is the value used for conduction-loss calculations in the power stage.

Is the STF15NM65N RoHS compliant?

Yes, it is listed as ROHS3 compliant.