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STMicroelectronics STF15NM60N — Discrete Semiconductors

STF15NM60N MOSFET, 600V N-Channel, MDmesh II, TO-220FP

MPNSTF15NM60N
Obsolete

STMicroelectronics STF15NM60N, N-Channel MOSFET, MDmesh™ II series, 600V Vdss, 14A Id, 299mOhm Rds(on) at 10V, TO-220-3 Full Pack, Through Hole.

$3.5700Ref. price · indicative, final on quote
STMicroelectronics STF15NM60N datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF15NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C14A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs299mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1250 pF @ 50 V

Product details

600 V, 14 A N-channel in a full-pack through-hole — what it is

The STMicroelectronics STF15NM60N is a 600 V, 14 A N-channel power MOSFET built on the MDmesh™ II technology — a multi-drain mesh layout that cuts on-resistance without sacrificing switching speed.

The STF15NM60N is listed as obsolete. The TO-220FP footprint is common across many 600 V N-channel MOSFETs, but the full-pack package limits the field — most alternatives are in the standard TO-220 with an exposed metal tab that requires an insulator.

The 600 V drain-source breakdown voltage gives 80% derating margin on a 400 V DC bus (typical PFC output) — comfortable for universal-input flyback converters. The 4 V gate threshold at 250 µA drain current is on the higher side for logic-level drive — the datasheet specifies 10 V gate drive for the rated Rds(on), so a 12 V bias rail or a dedicated gate-drive IC is expected, not a 5 V PWM output from a controller.

Frequently asked questions

What is a replacement for STF15NM60N?

A pin-compatible replacement would need to be a 600 V N-channel MOSFET in the TO-220FP full-pack package with similar Rds(on) and gate charge. Several manufacturers offer parts in this package, but the exact lead form and mounting hole pattern should be verified against the original.