600 V N-channel MOSFET in a fully isolated TO-220FP
That saves assembly time and removes one failure point from the thermal path. Key specs that define the switching and conduction performance: a maximum on-resistance of 378 mOhm at 5.5 A with a 10 V gate drive, and a total gate charge of 17 nC at 10 V. The low gate charge means the gate driver doesn't work hard to turn it on and off, which matters in high-frequency SMPS topologies like active PFC stages or resonant converters. Input capacitance is 590 pF at 100 V drain-source, a figure that helps estimate switching losses in the design phase. Maximum power dissipation is 25 W at the case — that's the budget for heatsink sizing, and you'll need to derate above 25°C case temperature.
ROHS3 compliant. For new designs or production BOM lines, there's no end-of-life clock ticking on this order code.