What this 100 V N-channel MOSFET brings to a power stage
The STF150N10F7 is an STMicroelectronics N-channel power MOSFET built on the STripFET VII DeepGATE technology platform.
The STF150N10F7 carries an official obsolete product status. STMicroelectronics no longer manufactures this order code, and no last-time-buy window is open. Any remaining stock in the distribution channel is new-old-stock or surplus inventory. For a production BOM that still calls out this exact number, the only sourcing path is through independent distributors who hold or can locate verified inventory. Because this part is obsolete, any replacement search should focus on a pin-compatible or functionally equivalent N-channel MOSFET in the same TO-220 Full Pack footprint. ST's own STripFET family includes later-generation devices that may drop in, but the exact substitute depends on your switching frequency, gate drive voltage, and thermal budget — cross-reference against your application conditions, not just the headline ratings.
Key ratings and the decisions they drive
The 4.2 mOhm Rds(on) at 55 A, 10 V is the part's strongest conduction spec. In a 48 V bus inverter or a 60 V telecom DC-DC stage, that resistance keeps I²R losses under 25 W at full load — manageable with the TO-220FP's 35 W case dissipation limit. If your design runs the MOSFET at 65 A continuous, the junction temperature rise will exceed 100°C above ambient even with a good heatsink, so the 175°C Tj(max) headroom is essential. Gate charge of 117 nC at 10 V is moderate for a 100 V device of this current class. A gate driver with at least 2 A peak source/sink capability will keep switching losses under control at frequencies up to 50–100 kHz. Input capacitance of 8115 pF at 50 V Vds means the driver sees a capacitive load that increases with lower drain voltage — factor that into the gate-drive loop layout.