STMicroelectronics STF14NM65N, MDmesh™ II, N-Channel MOSFET, 650V Vdss, 12A Id, 380mOhm Rds(on), TO-220-3 Full Pack, Through Hole.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1300 pF @ 50 V |
Through-hole mounting is straightforward for hand assembly or wave solder.
The 4 V threshold at 250 µA means logic-level drive (5 V) will turn it on, but the on-resistance is specified at 10 V — for lowest Rds(on), use a 10 V gate supply.
Yes, the STF14NM65N is listed as obsolete by STMicroelectronics.