STMicroelectronics MDmesh™ II series, STF14NM50N, N-Channel MOSFET, 500V Vdss, 12A Id, 320mOhm Rds(on), TO-220FP through-hole package, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 100µA |
| Rds on (Max) @ id, vgs | 320mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 27 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 816 pF @ 50 V |
The STF14NM50N: Input capacitance is 816 pF at 50 V drain-source, which together with the gate charge defines the drive circuit's peak current requirement and the switching losses in the transition region.
Housed in a TO-220 Full Pack (TO-220FP) through-hole package, the STF14NM50N mounts into a standard TO-220 footprint on the PCB.
This is the figure to use for worst-case conduction loss calculations in the power stage.
The STF14NM50N uses a TO-220 Full Pack (TO-220FP) through-hole package.