STMicroelectronics FDmesh™ II, N-Channel MOSFET, 600 V Drain-Source Voltage, 11 A Continuous Drain Current, 380 mOhm Rds(on) at 10V, TO-220-3 Full Pack, Through Hole, Active.
| Parameter | Value |
|---|---|
| Series | FDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 845 pF @ 50 V |
The STF13NM60ND is a 600 V N-channel MOSFET in a TO-220FP full-pack package, rated for 11 A continuous drain current.
Maximum on-resistance is 380 mOhm at 10 V gate-source and 5.5 A drain current. Gate charge is 24.5 nC at 10 V.
Maximum power dissipation is 25 W at case temperature; maximum junction temperature is 150°C.
This is the specified condition for the rated Rds(on).
The STF13NM60ND is supplied in a TO-220-3 Full Pack (TO-220FP) through-hole package. The full plastic encapsulation provides electrical isolation between the mounting tab and the die.